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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1930(LBS2MATQ,M. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 180 v. The transistor is a pnp type. The 1v @ 100ma, 1a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 2 w. Moreover, it corresponds to 2sa1930, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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