Toshiba Semiconductor and Storage 2SA1837,TOA1F(J

2SA1837-TOA1F-J Toshiba Semiconductor and Storage 2SA1837,TOA1F(J
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Frequency - Transition:
70MHz
Voltage - Collector Emitter Breakdown (Max):
230 V
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Packaging:
Bulk
Power - Max:
2 W
Base Product Number:
2SA1837
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1837,TOA1F(J. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 70mhz. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a pnp type. The 1.5v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 2 w. Moreover, it corresponds to 2sa1837, a base product number of the product. The product is designated with the ear99 code number.

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2SA1837(Datasheets)

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