Toshiba Semiconductor and Storage 2SA1162S-GR,LF(D

2SA1162S-GR-LF-D Toshiba Semiconductor and Storage 2SA1162S-GR,LF(D
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
150 mA
HTSUS:
8541.21.0095
Operating Temperature:
125°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 2mA, 6V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Power - Max:
150 mW
Base Product Number:
2SA1162
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1162S-GR,LF(D. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 125°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 70 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to 2sa1162, a base product number of the product. The product is designated with the ear99 code number.

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