Toshiba Semiconductor and Storage 2SA1020-Y(F,M)

Enrgtech Part No: ET14927680
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Manufacturer Part No:
2SA1020-Y(F,M)
|
Manufacturer: Toshiba Semiconductor and Storage

2SA1020-Y-F-M- Toshiba Semiconductor and Storage 2SA1020-Y(F,M)

Product Information

Current - Collector (Ic) (Max):

2 A

HTSUS:

8541.21.0075

Operating Temperature:

150°C (TJ)

Package / Case:

TO-226-3, TO-92-3 Long Body

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 500mA, 2V

edacadModel:

2SA1020-Y(F,M) Models

Frequency - Transition:

100MHz

Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max):

50 V

edacadModelUrl:

/en/models/6600445

Transistor Type:

PNP

Package:

Bulk

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1020-Y(F,M). The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 70 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 500mv @ 50ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sa1020, a base product number of the product. The product is designated with the ear99 code number.

2SA1020(Datasheets)

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Toshiba Semiconductor and Storage 2SA1020-Y(F,M)

2SA1020-Y(F,M)

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