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ON Semiconductor TN6729A_D26Z

TN6729A_D26Z ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
TN6729
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 1A 1W Through Hole TO-226
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 250mA, 1V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 250mA
Supplier Device Package:
TO-226
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is TN6729A_D26Z. Base Part Number: tn6729. It features bipolar (bjt) transistor pnp 80v 1a 1w through hole to-226. Furthermore, 50 @ 250ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 500mv @ 10ma, 250ma is the maximum Vce saturation. to-226 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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TN6729A, NZT6729(Datasheets)

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