ON Semiconductor TN2907A

TN2907A ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
TN2907
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 800mA 625mW Through Hole TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
TO-226-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is TN2907A. Base Part Number: tn2907. It features bipolar (bjt) transistor pnp 60v 800ma 625mw through hole to-226-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. to-226-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 800ma. In addition, 10na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)

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