Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Width:
4.83mm
Transistor Configuration:
Single
Maximum Operating Frequency:
3 MHz
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Length:
10.67mm
Maximum DC Collector Current:
6 A
Pin Count:
3
Minimum DC Current Gain:
15
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Collector Emitter Voltage:
100 V
Height:
16.51mm
Base Part Number:
TIP41
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 600mA, 6A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
