Minimum DC Current Gain:
500
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Collector Cut-off Current:
2mA
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
TIP112
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 8mA, 2A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
