ON Semiconductor SS9012HBU

SS9012HBU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
SS9012
Detailed Description:
Bipolar (BJT) Transistor PNP 20V 500mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
144 @ 50mA, 1V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SS9012HBU. Base Part Number: ss9012. It features bipolar (bjt) transistor pnp 20v 500ma 625mw through hole to-92-3. Furthermore, 144 @ 50ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 600mv @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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SS9012(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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