Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Emitter Voltage:
25 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
200 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
SS8550
Detailed Description:
Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 1W Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
Transistor Type:
PNP
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
