ON Semiconductor PN3638A

PN3638A ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
PN363
Detailed Description:
Bipolar (BJT) Transistor PNP 25V 800mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 300mA, 2V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 30mA, 300mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
35nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is PN3638A. Base Part Number: pn363. It features bipolar (bjt) transistor pnp 25v 800ma 625mw through hole to-92-3. Furthermore, 20 @ 300ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1v @ 30ma, 300ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 800ma. In addition, 35na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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PN3638/A(Datasheets)

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