Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
4 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
MPSA06
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
