Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
-1.6 V
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-60 V
Maximum Base Emitter Saturation Voltage:
-2.6 V
Maximum Emitter Base Voltage:
-5 V
Length:
5.2mm
Maximum DC Collector Current:
600 mA
Pin Count:
3
Minimum DC Current Gain:
50
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.5 W
Maximum Collector Emitter Voltage:
60 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
MPS290
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
PNP
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
