Minimum DC Current Gain:
100
Transistor Type:
NPN
Maximum Collector Base Voltage:
80 V
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
4 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBTA06
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
