Minimum DC Current Gain:
50
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
-0.15 V
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-1.1 V
Height:
0.93mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
800 mA
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBT4354
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 800mA 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Transistor Type:
PNP
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
ON Semiconductor
