ON Semiconductor MMBT2222

MMBT2222 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MMBT2222
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MMBT2222. Base Part Number: mmbt2222. It features bipolar (bjt) transistor npn 30v 600ma 250mhz 350mw surface mount sot-23-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 600ma. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mold Compound 12/Dec/2007(PCN Design/Specification)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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