ON Semiconductor MJW21193

MJW21193 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJW21
Detailed Description:
Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 8A, 5V
Transistor Type:
PNP
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJW21193. Base Part Number: mjw21. It features bipolar (bjt) transistor pnp 250v 16a 4mhz 200w through hole to-247. Furthermore, 20 @ 8a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 4v @ 3.2a, 16a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-247-3. The maximum collector current includes 16a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 19/Jun/2009(PCN Obsolescence/ EOL)
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MJW21193, 4(Datasheets)

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