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ON Semiconductor MJW21192G

MJW21192G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJW21
Detailed Description:
Bipolar (BJT) Transistor NPN 150V 8A 4MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 1.6A, 8A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJW21192G. Base Part Number: mjw21. It features bipolar (bjt) transistor npn 150v 8a 4mhz 125w through hole to-247. Furthermore, 15 @ 4a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 2v @ 1.6a, 8a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 150v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-247-3. The maximum collector current includes 8a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 07/Jul/2010(PCN Obsolescence/ EOL)
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MJW21191, 92(Datasheets)

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