ON Semiconductor MJF122

MJF122 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJF12
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 5A 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 3A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 20mA, 5A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJF122. Base Part Number: mjf12. It features bipolar (bjt) transistor npn - darlington 100v 5a 2w through hole to-220fp. Furthermore, 2000 @ 3a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 3.5v @ 20ma, 5a is the maximum Vce saturation. to-220fp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 5a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 19/Jun/2009(PCN Obsolescence/ EOL)
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MJF122, 127(Datasheets)

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