ON Semiconductor MJE703

MJE703 ON Semiconductor
MJE703
ON Semiconductor

Product Information

Base Part Number:
MJE703
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE703. Base Part Number: mje703. It features bipolar (bjt) transistor pnp - darlington 80v 4a 40w through hole to-225aa. Furthermore, 750 @ 2a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The product is available in through hole configuration. The 2.8v @ 40ma, 2a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MJE700-703,800-803(Datasheets)

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