ON Semiconductor MJE700STU

MJE700STU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJE700
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 60V 4A 40W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE700STU. Base Part Number: mje700. It features bipolar (bjt) transistor pnp - darlington 60v 4a 40w through hole to-126-3. Furthermore, 750 @ 1.5a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The product is available in through hole configuration. The 2.5v @ 30ma, 1.5a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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MJE700-MJE703(Datasheets)

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