ON Semiconductor MJE4343

MJE4343 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJE43
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 8A, 2V
Transistor Type:
NPN
Frequency - Transition:
1MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 2A, 16A
Supplier Device Package:
SOT-93
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-218-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
750µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE4343. Base Part Number: mje43. It features bipolar (bjt) transistor npn 160v 16a 1mhz 125w through hole sot-93. Furthermore, 15 @ 8a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 1mhz. The product is available in through hole configuration. The 3.5v @ 2a, 16a is the maximum Vce saturation. sot-93 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-218-3. The maximum collector current includes 16a. In addition, 750µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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MJE4343, 53(Datasheets)

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