ON Semiconductor MJE3055T

MJE3055T ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJE3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 75W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE3055T. Base Part Number: mje3055. It features bipolar (bjt) transistor npn 60v 10a 2mhz 75w through hole to-220ab. Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 2mhz. The product is available in through hole configuration. The 8v @ 3.3a, 10a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 75w. Moreover, the product comes in to-220-3. The maximum collector current includes 10a. In addition, 700µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 19/Jun/2009(PCN Obsolescence/ EOL)
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MJE2955T, 3055T(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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