ON Semiconductor MJE270

MJE270 ON Semiconductor
MJE270
ON Semiconductor

Product Information

Base Part Number:
MJE27
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 6MHz 1.5W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
1500 @ 120mA, 10V
Transistor Type:
NPN - Darlington
Frequency - Transition:
6MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 1.2mA, 120mA
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE270. Base Part Number: mje27. It features bipolar (bjt) transistor npn - darlington 100v 2a 6mhz 1.5w through hole to-126. Furthermore, 1500 @ 120ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 6mhz. The product is available in through hole configuration. The 3v @ 1.2ma, 120ma is the maximum Vce saturation. to-126 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.5w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 2a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MJE270, 271(Datasheets)

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