ON Semiconductor MJE18008

MJE18008 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJE18
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 1A, 5V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 900mA, 4.5V
Series:
SWITCHMODE™
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE18008. Base Part Number: mje18. It features bipolar (bjt) transistor npn 450v 8a 13mhz 125w through hole to-220. Furthermore, 14 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 13mhz. The product is available in through hole configuration. The 700mv @ 900ma, 4.5v is the maximum Vce saturation. The product switchmode™, is a highly preferred choice for users. to-220 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 450v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-220-3. The maximum collector current includes 8a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 19/Jun/2009(PCN Obsolescence/ EOL)
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MJE18008, MJF18008(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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