ON Semiconductor MJE13009G

MJE13009G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJE13
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 12A 4MHz 2W Through Hole TO-220AB
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
12A
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5A, 5V
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE13009G. Base Part Number: mje13. It features bipolar (bjt) transistor npn 400v 12a 4mhz 2w through hole to-220ab. The transistor is a npn type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 3v @ 3a, 12a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 12a. Furthermore, 8 @ 5a, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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MJE13009(Datasheets)

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