Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
350 V
Maximum Collector Emitter Voltage:
250 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJD47
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 1A 10MHz 1.56W Surface Mount TO-252-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-252-3
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.56W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
200µA
Manufacturer:
ON Semiconductor
