ON Semiconductor MJD2955-001

MJD2955-001 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJD29
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
PNP
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD2955-001. Base Part Number: mjd29. It features bipolar (bjt) transistor pnp 60v 10a 2mhz 1.75w through hole i-pak. Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 2mhz. The product is available in through hole configuration. The 8v @ 3.3a, 10a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 10a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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MJD2955, MJD3055(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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