ON Semiconductor MJD117-001

MJD117-001 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MJD11
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Transistor Type:
PNP - Darlington
Frequency - Transition:
25MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD117-001. Base Part Number: mjd11. It features bipolar (bjt) transistor pnp - darlington 100v 2a 25mhz 1.75w through hole i-pak. Furthermore, 1000 @ 2a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The transition frequency of the product is 25mhz. The product is available in through hole configuration. The 3v @ 40ma, 4a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 2a. In addition, 20µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MJD112,117(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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