Minimum DC Current Gain:
25
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.97mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Emitter Voltage:
200 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Height:
0.97mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
6 V
Maximum Collector Base Voltage:
200 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KST43
Detailed Description:
Bipolar (BJT) Transistor NPN 200V 500mA 50MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 30mA, 10V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 2mA, 20mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
