ON Semiconductor KSP56BU

KSP56BU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSP56
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 100mA, 1V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSP56BU. Base Part Number: ksp56. It features bipolar (bjt) transistor pnp 80v 500ma 50mhz 625mw through hole to-92-3. Furthermore, 50 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 500ma. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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KSP55-KSP56(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)

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