Minimum DC Current Gain:
30
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Base Voltage:
300 V
Maximum Collector Emitter Voltage:
300 V
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSE34
Detailed Description:
Bipolar (BJT) Transistor NPN 300V 500mA 20W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
500mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
