Transistor Type:
NPN
Dimensions:
8.3 x 3.45 x 11.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
10 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
35 Weeks
Base Part Number:
KSD882
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 1A, 2V
Transistor Type:
NPN
Frequency - Transition:
90MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
