ON Semiconductor KSD471ACGBU

KSD471ACGBU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSD471
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
130MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSD471ACGBU. Base Part Number: ksd471. It features bipolar (bjt) transistor npn 30v 1a 130mhz 800mw through hole to-92-3. Furthermore, 200 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 130mhz. The product is available in through hole configuration. The 500mv @ 100ma, 1a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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KSD471A(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)

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