Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
0.7 V
Maximum Collector Base Voltage:
160 V
Maximum Collector Emitter Voltage:
160 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
KSC2690
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 1.2A 155MHz 1.2W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 300mA, 5V
Transistor Type:
NPN
Frequency - Transition:
155MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.2W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
