Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
5.1 x 4.1 x 8.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Continuous Collector Current:
1 A
Maximum Collector Emitter Voltage:
160 V
Height:
8.2mm
Width:
4.1mm
Length:
5.1mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
6 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
44 Weeks
Base Part Number:
KSC2383
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 200mA, 5V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
