Dimensions:
4.58 x 3.86 x 4.58mm
Maximum Collector Emitter Saturation Voltage:
0.7 V
Width:
3.86mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
160 V
Maximum Base Emitter Saturation Voltage:
1 V
Maximum Emitter Base Voltage:
8 V
Length:
4.58mm
Maximum DC Collector Current:
700 mA
Pin Count:
3
Minimum DC Current Gain:
40
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Voltage:
140 V
Height:
4.58mm
Base Part Number:
KSC1009
Detailed Description:
Bipolar (BJT) Transistor NPN 140V 700mA 50MHz 800mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 50mA, 2V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 20mA, 200mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
700mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
