ON Semiconductor KSC1008GBU

KSC1008GBU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSC1008
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 50mA, 2V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
700mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSC1008GBU. Base Part Number: ksc1008. It features bipolar (bjt) transistor npn 60v 700ma 50mhz 800mw through hole to-92-3. Furthermore, 200 @ 50ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 400mv @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 700ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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KSC1008OBU(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)

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FAQs

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