Transistor Type:
NPN
Dimensions:
4.7 x 3.93 x 4.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.1 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
8 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
700 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
KSC1008
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 50mA, 2V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
700mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
