ON Semiconductor KSB834O

KSB834O ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSB834
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 3A 9MHz 1.5W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 500mA, 5V
Transistor Type:
PNP
Frequency - Transition:
9MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 300mA, 3A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSB834O. Base Part Number: ksb834. It features bipolar (bjt) transistor pnp 60v 3a 9mhz 1.5w through hole to-220-3. Furthermore, 60 @ 500ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 9mhz. The product is available in through hole configuration. The 1v @ 300ma, 3a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.5w. Moreover, the product comes in to-220-3. The maximum collector current includes 3a. In addition, 100µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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TO220B03 Pkg Drawing(Datasheets)
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KSB834(Datasheets)
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Lead Frame Dimensions 29/Nov/2007(PCN Design/Specification)

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