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This is manufactured by ON Semiconductor. The manufacturer part number is KSB1151YSTSTU. Base Part Number: ksb11. It features bipolar (bjt) transistor pnp 60v 5a 1.3w through hole to-126-3. Furthermore, 160 @ 2a, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 300mv @ 200ma, 2a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.3w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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