ON Semiconductor KSB1116SYBU

KSB1116SYBU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSB11
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 1A 120MHz 750mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
135 @ 100mA, 2V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 50mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
750mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSB1116SYBU. Base Part Number: ksb11. It features bipolar (bjt) transistor pnp 50v 1a 120mhz 750mw through hole to-92-3. Furthermore, 135 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 120mhz. The product is available in through hole configuration. The 300mv @ 50ma, 1a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 750mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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KSB1116S(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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