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This is manufactured by ON Semiconductor. The manufacturer part number is KSB1116GTA. Base Part Number: ksb11. It features bipolar (bjt) transistor pnp 50v 1a 120mhz 750mw through hole to-92-3. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 120mhz. The product is available in through hole configuration. The 300mv @ 50ma, 1a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & box (tb) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 750mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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