Transistor Type:
PNP
Dimensions:
10.16 x 2.54 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
-1.7 V
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
KSB10
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 4A 9MHz 25W Through Hole TO-220F
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 5V
Transistor Type:
PNP
Frequency - Transition:
9MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.7V @ 300mA, 3A
Supplier Device Package:
TO-220F
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
25W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
30µA (ICBO)
Manufacturer:
ON Semiconductor
