Minimum DC Current Gain:
150
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Continuous Collector Current:
-50 A
Maximum Collector Emitter Voltage:
-120 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Maximum Emitter Base Voltage:
-5 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSA992
Detailed Description:
Bipolar (BJT) Transistor PNP 120V 50mA 100MHz 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1mA, 6V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
50mA
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
