Transistor Type:
PNP
Dimensions:
9.9 x 4.5 x 9.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
-1.5 V
Maximum Collector Base Voltage:
-150 V
Maximum Collector Emitter Voltage:
150 V
Maximum Operating Frequency:
4 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
KSA940
Detailed Description:
Bipolar (BJT) Transistor PNP 150V 1.5A 4MHz 1.5W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 500mA, 10V
Transistor Type:
PNP
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor