ON Semiconductor KSA3010RTU
Product Information
Base Part Number:
KSA30
Detailed Description:
Bipolar (BJT) Transistor PNP 120V 6A 30MHz 60W Through Hole TO-3P
DC Current Gain (hFE) (Min) @ Ic, Vce:
55 @ 1A, 5V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 500mA, 5A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
60W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
Checking for live stock
FAQs
Yes. You can also search KSA3010RTU on website for other similar products.
We accept all major payment methods for all products including ET14526777. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with KSA3010RTU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor KSA3010RTU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor KSA3010RTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14526777 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14526777.
Yes. We ship KSA3010RTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSA3010RTU. Base Part Number: ksa30. It features bipolar (bjt) transistor pnp 120v 6a 30mhz 60w through hole to-3p. Furthermore, 55 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 30mhz. The product is available in through hole configuration. The 2.5v @ 500ma, 5a is the maximum Vce saturation. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 60w. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector current includes 6a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.