ON Semiconductor KSA1220AYSTSTU

KSA1220AYSTSTU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
KSA1220
Detailed Description:
Bipolar (BJT) Transistor PNP 160V 1.2A 175MHz 1.2W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 300mA, 5V
Transistor Type:
PNP
Frequency - Transition:
175MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.2W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSA1220AYSTSTU. Base Part Number: ksa1220. It features bipolar (bjt) transistor pnp 160v 1.2a 175mhz 1.2w through hole to-126. Furthermore, 160 @ 300ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 175mhz. The product is available in through hole configuration. The 700mv @ 200ma, 1a is the maximum Vce saturation. to-126 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.2w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1.2a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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KSA1220/1220A(Datasheets)

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