Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-50 V
Maximum Base Emitter Saturation Voltage:
-1.1 V
Maximum Emitter Base Voltage:
-5 V
Length:
5.2mm
Maximum DC Collector Current:
150 mA
Pin Count:
3
Minimum DC Current Gain:
70
Mounting Type:
Through Hole
Maximum Power Dissipation:
400 mW
Maximum Collector Emitter Voltage:
50 V
Height:
5.33mm
Base Part Number:
KSA1015
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Transistor Type:
PNP
Frequency - Transition:
80MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
400mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
