ON Semiconductor KSA1013OTA
Product Information
Minimum DC Current Gain:
60
Transistor Type:
PNP
Dimensions:
5.1 x 4.1 x 8.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-1.5 V
Maximum Collector Base Voltage:
-160 V
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
1 MHz
Height:
8.2mm
Width:
4.1mm
Length:
5.1mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
-6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSA1013
Detailed Description:
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 200mA, 5V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14526705 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14526705.
Yes. We ship KSA1013OTA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSA1013OTA. It features up to 60 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 5.1 x 4.1 x 8.2mm. The product is available in through hole configuration. Provides up to 900 mw maximum power dissipation. The product has a maximum -1.5 v collector emitter saturation voltage . Additionally, it has -160 v maximum collector base voltage. Whereas features a 160 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. In addition, the height is 8.2mm. Furthermore, the product is 4.1mm wide. Its accurate length is 5.1mm. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. It features a -6 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksa1013. It features bipolar (bjt) transistor pnp 160v 1a 50mhz 900mw through hole to-92-3. Furthermore, 100 @ 200ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 1.5v @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 900mw. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum collector current includes 1a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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